Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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Verlag: Institution of Engineering and Technology, GB, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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In den WarenkorbHardback. Zustand: New. The transition towards exascale computing has resulted in major transformations in computing paradigms. The need to analyze and respond to such large amounts of data sets has led to the adoption of machine learning (ML) and deep learning (DL) methods in a wide range of applications. One of the major challenges is the fetching of data from computing memory and writing it back without experiencing a memory-wall bottleneck. To address such concerns, in-memory computing (IMC) and supporting frameworks have been introduced. In-memory computing methods have ultra-low power and high-density embedded storage. Resistive Random-Access Memory (ReRAM) technology seems the most promising IMC solution due to its minimized leakage power, reduced power consumption and smaller hardware footprint, as well as its compatibility with CMOS technology, which is widely used in industry. In this book, the authors introduce ReRAM techniques for performing distributed computing using IMC accelerators, present ReRAM-based IMC architectures that can perform computations of ML and data-intensive applications, as well as strategies to map ML designs onto hardware accelerators. The book serves as a bridge between researchers in the computing domain (algorithm designers for ML and DL) and computing hardware designers.
Verlag: Institution of Engineering and Technology, GB, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
Anbieter: Rarewaves USA United, OSWEGO, IL, USA
EUR 133,45
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In den WarenkorbHardback. Zustand: New. The transition towards exascale computing has resulted in major transformations in computing paradigms. The need to analyze and respond to such large amounts of data sets has led to the adoption of machine learning (ML) and deep learning (DL) methods in a wide range of applications. One of the major challenges is the fetching of data from computing memory and writing it back without experiencing a memory-wall bottleneck. To address such concerns, in-memory computing (IMC) and supporting frameworks have been introduced. In-memory computing methods have ultra-low power and high-density embedded storage. Resistive Random-Access Memory (ReRAM) technology seems the most promising IMC solution due to its minimized leakage power, reduced power consumption and smaller hardware footprint, as well as its compatibility with CMOS technology, which is widely used in industry. In this book, the authors introduce ReRAM techniques for performing distributed computing using IMC accelerators, present ReRAM-based IMC architectures that can perform computations of ML and data-intensive applications, as well as strategies to map ML designs onto hardware accelerators. The book serves as a bridge between researchers in the computing domain (algorithm designers for ML and DL) and computing hardware designers.
Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
Anbieter: GreatBookPrices, Columbia, MD, USA
EUR 126,97
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In den WarenkorbZustand: As New. Unread book in perfect condition.
Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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Verlag: INSTITUTION OF ENGINEERING & T, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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In den WarenkorbZustand: New. Über den AutorHao Yu is a professor in the School of Microelectronics at Southern University of Science and Technology (SUSTech), China. His main research interests cover energy-efficient IC chip design and mmwave IC design. He i.
Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
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Verlag: Inst of Engineering & Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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In den WarenkorbHardcover. Zustand: Brand New. 243 pages. 9.25x6.50x1.00 inches. In Stock.
Verlag: The Institution of Engineering and Technology, 2021
ISBN 10: 1839530812 ISBN 13: 9781839530814
Sprache: Englisch
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In den WarenkorbZustand: New.