Hardcover. Zustand: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
Hardcover. Zustand: Fine. No Jacket. 1st Edition. Springer-Verlag pictorial hardcover sans jacket (as issued), 1989, clean/tight, No marks or signs of use and No "shelf wear"; (Fine). We will bubble wrap the book and ship it in a New BOX- Not a plastic bag like the zombie sellers.
EUR 31,46
Anzahl: 1 verfügbar
In den WarenkorbZustand: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has soft covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,600grams, ISBN:9780070021532.
Sprache: Englisch
Verlag: McGraw Hill Higher Education, 1987
ISBN 10: 0070021074 ISBN 13: 9780070021075
Anbieter: Ammareal, Morangis, Frankreich
EUR 31,29
Anzahl: 1 verfügbar
In den WarenkorbHardcover. Zustand: Bon. Ancien livre de bibliothèque avec équipements. Couverture différente. Edition 1987. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Different cover. Edition 1987. Ammareal gives back up to 15% of this item's net price to charity organizations.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: Rarewaves.com USA, London, LONDO, Vereinigtes Königreich
EUR 56,47
Anzahl: 11 verfügbar
In den WarenkorbPaperback. Zustand: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: GreatBookPrices, Columbia, MD, USA
Zustand: New.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: GreatBookPrices, Columbia, MD, USA
Zustand: As New. Unread book in perfect condition.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: California Books, Miami, FL, USA
Zustand: New.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: Grand Eagle Retail, Bensenville, IL, USA
Paperback. Zustand: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Anbieter: Webbooks, Wigtown, Wigtown, Vereinigtes Königreich
Verbandsmitglied: PBFA
Erstausgabe
EUR 31,93
Anzahl: 1 verfügbar
In den WarenkorbHardcover. Zustand: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
EUR 51,63
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 58,44
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 59,64
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
EUR 56,48
Anzahl: 10 verfügbar
In den WarenkorbPF. Zustand: New.
Verlag: Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Anbieter: Antiquariaat Ovidius, Bredevoort, Niederlande
Zustand: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
EUR 56,99
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: As New. Unread book in perfect condition.
Sprache: Englisch
Verlag: World Scientific Publishing Company 1/1/1987, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: BargainBookStores, Grand Rapids, MI, USA
Paperback or Softback. Zustand: New. Introd to Semiconductor Device Modelling. Book.
Anbieter: Westland Books, Wymondham, Vereinigtes Königreich
Erstausgabe
EUR 59,13
Anzahl: 1 verfügbar
In den WarenkorbGood. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
Zustand: New. pp. 300.
Sprache: Englisch
Verlag: World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 74,02
Anzahl: 2 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
Zustand: As New. Unread book in perfect condition.
EUR 77,76
Anzahl: 2 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 92,10
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
EUR 106,69
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New.
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
EUR 89,74
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: As New. Unread book in perfect condition.
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
EUR 92,09
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New.
Taschenbuch. Zustand: Neu. Compound Semiconductor Device Modelling | Christopher M. Snowden (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781447120506 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: AussieBookSeller, Truganina, VIC, Australien
Paperback. Zustand: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Anbieter: Rarewaves.com UK, London, Vereinigtes Königreich
EUR 51,65
Anzahl: 14 verfügbar
In den WarenkorbPaperback. Zustand: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.