Tunneling Field Effect Transistor Technology (Hardcover)

Lining Zhang

ISBN 10: 3319316516 / ISBN 13: 9783319316512

Verlag: Springer International Publishing AG, Cham, 2016

Beschreibung

Hardcover. This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency. This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Bestandsnummer des Verkäufers 9783319316512

Bibliografische Details

• Titel: Tunneling Field Effect Transistor Technology (Hardcover)
• Verlag: Springer International Publishing AG, Cham
• Erscheinungsjahr: 2016
• Sprache: Englisch
• ISBN-10: 3319316516
• ISBN-13: 9783319316512
• Einband: Hardcover
• Auflage: 1. Auflage
• Zustand: new

Über diesen Titel

Inhaltsangabe

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Von der hinteren Coverseite

This book provides a single-source reference tothe state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, theTFETs fabrication process and the important roles that TFETs will play inenabling integrated circuit designs for power efficiency. 

·        Provides comprehensive reference to tunneling field effecttransistors (TFETs);

·        Covers all aspects of TFETs, from device process to modeling andapplications;

·        Enables design of power-efficient integrated circuits, with lowpower consumption TFETs.