Jennifer rupp (38 Ergebnisse)

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paperback. Zustand: Very Good. Connecting readers with great books since 1972! Used books may not include companion materials, and may have some shelf wear or limited writing. We ship orders daily and Customer Service is our top priority.

Zustand: very_good. This is a well-cared-for used book with light signs of previous use. There may be minor cover wear, a faint crease, or slight spine wear, but overall it's in great shape and fully readable. Please note: -May contain library or rental stickers. -Supplemental materials e.g., CDs, access codes, inserts are not guaranteed. -Box sets may not include original exterior box. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading. …

paperback. Zustand: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

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Soft cover. Zustand: Fine. 160 pages : color illustrations, color maps ; 22 cm ; OCLC 869744029 ; "August 2010." ; color photographic stiff paper wrappers ; FINE. Book.

Hardcover. Zustand: Brand New. 112 pages. 9.00x6.00x0.50 inches. In Stock.

Hardcover. Zustand: Brand New. 112 pages. 9.00x6.00x0.50 inches. In Stock.

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Paperback. Zustand: Brand New. German language. 11.73x8.19x0.59 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept. …

paperback. Zustand: Very Good. Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. SHIPS FROM MULTIPLE LOCATIONS. book.

Zustand: New. 1st ed. 2022 edition NO-PA16APR2015-KAP.

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PAP. Zustand: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten. 54 pp. Deutsch.…

Zustand: New. Print on Demand.

Zustand: New. Print on Demand.

Zustand: New. PRINT ON DEMAND.

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten.…

Zustand: new. Questo è un articolo print on demand.

Zustand: new. Questo è un articolo print on demand.

Gebunden. Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Explains diffusive processes at room temperature and materials/materials combination in resistive switchingIllustrates the role of defects in zero, one, and two dimensionsFeatures applications of ReRAMs in engineering such as novel comp.…

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and phys.…

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept. 392 pp. Englisch.…

Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept. 392 pp. Englisch.…

Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers¿ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 392 pp. Englisch.…

Buch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers¿ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 392 pp. Englisch.…