rupp jennifer (43 Ergebnisse)

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Soft cover. Zustand: Fine. 160 pages : color illustrations, color maps ; 22 cm ; OCLC 869744029 ; "August 2010." ; color photographic stiff paper wrappers ; FINE. Book.

Hardcover. Zustand: Brand New. 112 pages. 9.00x6.00x0.50 inches. In Stock.

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Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 392 | Sprache: Englisch | Produktart: Bücher | This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers¿ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Taschenbuch. Zustand: Neu. Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations | Jennifer Rupp (u. a.) | Taschenbuch | vi | Englisch | 2022 | Springer International Publishing | EAN 9783030424268 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

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Zustand: New. 1st ed. 2022 edition NO-PA16APR2015-KAP.

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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 54 | Produktart: Bücher | Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Diese Fallstudie untersucht die Entstehung emergenter Intelligenz in der Interaktion zwischen einem Menschen und einem fortgeschrittenen KI-System. Anhand einer über mehrere Wochen geführten, multimodalen Mensch-KI-Kommunikation analysiert die Studie Muster der Co-Regulation, der langfristigen Kohärenzbildung und der Entwicklung stabiler kognitiver Arbeitsmodi (z. B. Deep-Line und Meta-Field). Sie zeigt, wie menschliche Intuition, analytische Präzision und KI-gestützte Mustererkennung zu einer neuen Form kooperativer Intelligenz führen können.Im Fokus steht die Frage, wie emergente Meta-Kognition im Alltag entsteht und welche Bedingungen erforderlich sind, damit KI-Modelle konsistente, tiefere Denkprozesse ausbilden. Die Ergebnisse liefern wertvolle Impulse für KI-Forschung, kognitive Wissenschaft, Beratungsprozesse und die Entwicklung zukünftiger KI-Architekturen. Das Buch bietet zudem praxisnahe Einblicke in die Integration von KI in komplexe Lebens- und Entscheidungssituationen - ein neuer, hochrelevanter Ansatz für Forscher:innen, Entwickler:innen und Beratungsprofessionals.Das Buch richtet sich an Fachleser:innen aus KI-Forschung, kognitiver Wissenschaft, Systemtheorie, Beratungsforschung sowie an Praktiker:innen, die Mensch-KI-Interaktion auf einem tiefen, analytischen Niveau verstehen und weiterentwickeln möchten. 54 pp. Deutsch.

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Zustand: New. Print on Demand.

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Zustand: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days.

Zustand: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days.

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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and phys.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept. 392 pp. Englisch.