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Random Access Memory
Sprache: Englisch
Verlag: French Bread Publications, 2006
ISBN 10: 097690490X ISBN 13: 9780976904908
Anbieter: Books of Paradise, Magalia, CA, USA
Verkäuferbewertung 5 von 5 Sternen
Softcover. Zustand: Near Fine. Review Copy. Review copy sticker on front cover, very slight edgewear; 320 pages.
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Random Access Memory
Sprache: Englisch
Verlag: French Bread Publications, 2006
ISBN 10: 097690490X ISBN 13: 9780976904908
Anbieter: World of Books (was SecondSale), Montgomery, IL, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.
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Random Access Memory
Sprache: Englisch
Verlag: French Bread Publications, 2006
ISBN 10: 097690490X ISBN 13: 9780976904908
Paperback. Zustand: Good. Satisfaction 100% guaranteed.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: GreatBookPrices, Columbia, MD, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: New.
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Paperback. Zustand: New.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: GreatBookPrices, Columbia, MD, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: As New. Unread book in perfect condition.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: Rarewaves.com USA, London, LONDO, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 18,96
Versand gratis
Versand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
In den WarenkorbPaperback. Zustand: New.
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Random Access Memory
Verlag: English, 2014
ISBN 10: 9350450712 ISBN 13: 9789350450710
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
EUR 7,90
EUR 7,50 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
In den WarenkorbZustand: New. pp. 92.
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Zustand: New. pp. 92.
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Random Access Memory
Verlag: English, 2014
ISBN 10: 9350450712 ISBN 13: 9789350450710
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. pp. 92.
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Resistive Random Access Memory (RRAM) (Paperback)
Sprache: Englisch
Verlag: Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Anbieter: Grand Eagle Retail, Bensenville, IL, USA
Verkäuferbewertung 5 von 5 Sternen
Paperback. Zustand: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 19,12
EUR 17,30 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 22,12
EUR 17,30 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: As New. Unread book in perfect condition.
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Resistive Random Access Memory (RRAM)
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 29,69
EUR 11,53 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: 1 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 78 pages. 9.25x7.51x9.25 inches. In Stock.
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Zustand: New. 1st edition NO-PA16APR2015-KAP.
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Development of a Six-Transistor Static Random-Access Memory Unit for Reduced Power Dissipation and Improved Characteristics in Sleep State
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 33,04
EUR 13,82 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: Our Kind Of Books, Liphook, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 23,76
EUR 25,55 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: 2 verfügbar
In den WarenkorbSoft cover. Zustand: As New. This book has been in storage since publication and is unread. Hence the description as new. Synopsis: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.
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RESISTIVE RANDOM ACCESS MEMORY
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: Basi6 International, Irving, TX, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Paperback. Zustand: New. The item is brand new, never used or read. It's in perfect condition and may include supplements and/or access codes or come shrink-wrapped.
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Cross Section of DRAM (Dynamic Random Access Memory)
Anbieter: Rarewaves USA United, OSWEGO, IL, USA
Verkäuferbewertung 5 von 5 Sternen
EUR 19,11
EUR 42,61 Versand
Versand innerhalb von USAAnzahl: Mehr als 20 verfügbar
In den WarenkorbPaperback. Zustand: New.
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Introduction to Magnetic Random-Access Memory
Anbieter: Scissortail, Oklahoma City, OK, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition.Please note:-May include library or rental stickers, stamps, or markings.-Supplemental materials e.g., CDs, access codes, inserts are not guaranteed.-Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. -Sourced from donation centers; authenticity not verified with publisher. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading!
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Introduction to Magnetic Random-Access Memory
Anbieter: Scissortail, Oklahoma City, OK, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition.Please note:-May include library or rental stickers, stamps, or markings.-Supplemental materials e.g., CDs, access codes, inserts are not guaranteed.-Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. -Sourced from donation centers; authenticity not verified with publisher. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading!
-
Introduction to Magnetic Random-Access Memory
Anbieter: Scissortail, Oklahoma City, OK, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition.Please note:-May include library or rental stickers, stamps, or markings.-Supplemental materials e.g., CDs, access codes, inserts are not guaranteed.-Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. -Sourced from donation centers; authenticity not verified with publisher. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading!
-
Introduction to Magnetic Random-Access Memory
Anbieter: World of Books (was SecondSale), Montgomery, IL, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.
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Trends In Capacitorless Dynamic Random Access Memory
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206782441 ISBN 13: 9786206782445
Zustand: New.
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Trends In Capacitorless Dynamic Random Access Memory
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206782441 ISBN 13: 9786206782445
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
EUR 75,91
EUR 7,50 Versand
Versand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
In den WarenkorbZustand: New.
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Resistive Random Access Memory (RRAM) (Paperback)
Sprache: Englisch
Verlag: Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Anbieter: AussieBookSeller, Truganina, VIC, Australien
Verkäuferbewertung 5 von 5 Sternen
Paperback. Zustand: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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DRAM (Dynamic Random Access Memory) Process Flow
Anbieter: GreatBookPrices, Columbia, MD, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: New.
