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Verlag: British Library, Historical Print Editions 6/23/2011, 2011
ISBN 10: 1241757062 ISBN 13: 9781241757069
Anbieter: BargainBookStores, Grand Rapids, MI, USA
Paperback or Softback. Zustand: New. ??????? ????????? ?????&. Book.
Sprache: Ukrainisch
Verlag: British Library, Historical Print Editions, 2011
ISBN 10: 1241757062 ISBN 13: 9781241757069
Anbieter: GreatBookPrices, Columbia, MD, USA
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Sprache: Ukrainisch
Verlag: British Library, Historical Print Editions, 2011
ISBN 10: 1241757062 ISBN 13: 9781241757069
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N.A. Zustand: New. ISBN:9788132202325.
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Sprache: Ukrainisch
Verlag: British Library, Historical Print Editions, 2011
ISBN 10: 1241757062 ISBN 13: 9781241757069
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Verlag: British Library, Historical Print Editions, 2011
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Verlag: British Library, Historical Print Editions, 2011
ISBN 10: 1241757062 ISBN 13: 9781241757069
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Zustand: New. pp. 248.
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Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
Zustand: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
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EUR 110,39
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Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
EUR 188,25
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Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 200,56
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In den WarenkorbZustand: New. pp. 244.
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Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
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